FDS6975 mosfet equivalent, dual p-channel mosfet.
-6 A, -30 V. RDS(ON) = 0.032 Ω @ VGS = -10 V, RDS(ON) = 0.045 Ω @ VGS = -4.5 V. Low gate charge (14.5nC typical). High performance trench technology for extremely low RDS.
load switching and power management, battery charging circuits, and DC/DC conversion.
Features
-6 A, -30 V. RDS(ON) = .
These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. T.
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